Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection

被引：16
|
作者：
Plis, E. [1 ]
Khoshakhlagh, A. [1 ]
Myers, S. [1 ]
Kim, H. S. [1 ]
Gautam, N. [1 ]
Sharma, Y. D. [1 ]
Krishna, S. [1 ]
Lee, S. J. [2 ]
Noh, S. K. [2 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] KRISS, Taejon 305600, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期
关键词：
current density; gallium compounds; III-V semiconductors; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; semiconductor superlattices; MINORITY-CARRIER LIFETIMES; INAS/INXGA1-XSB SUPERLATTICES; INAS/GA1-XINXSB SUPERLATTICE; TEMPERATURE LIMITS; OPTICAL-PROPERTIES; BAND-STRUCTURE; PERFORMANCE; DETECTIVITIES; SCATTERING;
D O I：
10.1116/1.3276429
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report on investigation of type-II InAs/GaSb and InAs/InxGa1-xSb strained layer superlattices (SLSs) for long-wave infrared detection. Growth conditions were optimized to obtain nearly lattice matched (Delta a/a similar to 0.03%) 13 ML InAs/7 ML GaSb SLS nBn detector structure with cutoff wavelength of similar to 8.5 mu m (77 K). Dark current density was equal to 3.2x10(-4) A/cm(2) (V-b=+50 mV, 77 K) for this detector structure. Thin 10 ML InAs/6 ML In0.35Ga0.65Sb SLS was grown with zero lattice mismatch achieved by incorporation of 2.5 ML of GaAs in every SLS period. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3276429]
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页数：6
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