Electron diffraction due to a reflection grating in a conducting wire

被引：3

作者：

Park, KW ^{[1
]}

Lee, S ^{[1
]}

Shin, M ^{[1
]}

Yuk, JS ^{[1
]}

Lee, EH ^{[1
]}

Kwon, HC ^{[1
]}

机构：

[1] KOREA RES INST STAND & SCI,SUPERCONDUCTING DIV,TAEJON 305606,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 24期

关键词：

D O I：

10.1063/1.120389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on quantum transport in the presence of an electron reflection grating fabricated within a high electron mobility transistor structure. The,orating was composed of a periodically corrugated potential wall by which the electron waves are diffracted. The low temperature conductance shows a number of peaks with respect to the gate voltage, which are consistent with the electron diffraction effect and are predicted by the Fraunhofer diffraction condition. (C) 1997 American Institute of Physics. [S0003-6951(97)01750-6].

引用

页码：3555 / 3557

页数：3

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