The use of constant-resistance DLTs to study proton radiation damages in CCD output MOSFETs

被引：0

作者：

Kolev, PV ^{[1
]}

Hardy, T ^{[1
]}

Deen, MJ ^{[1
]}

Murowinski, R ^{[1
]}

机构：

[1] Simon Fraser Univ, Burnaby, BC V5A 1S6, Canada

来源：

PROCEEDINGS OF THE ELECTROCHEMICAL SOCIETY SYMPOSIUM ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND DEVICES | 1997年 / 97卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper describes how a new variation of DLTS, called constant-resistance (CR) DLTS, can be applied to the study of radiation damage in buried-channel MOSFETs, which are used as CCD output amplifiers. The unique structure of these devices offers extended opportunities for studying the space distribution of the radiation induced defects. In addition, we show a variation of the CR DLTS technique using back gate driving, which is applicable for studying the channel-substrate p-n junction, and the results are compared with those obtained from constant-capacitance (CC) DLTS measurements.

引用

页码：389 / 399

页数：11

共 13 条

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