Micromagnetics of Spin-Flop Bilayers: S, C, and Vortex Spin States

被引:7
|
作者
Cherepov, S. S. [1 ]
Konovalenko, A. [1 ]
Korenivski, V. [1 ]
Worledge, D. C. [2 ]
机构
[1] Royal Inst Technol, SE-10691 Stockholm, Sweden
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
MRAM; spin vortices; spin-flop tunnel junctions; MAGNETIC VORTEX; DRIVEN;
D O I
10.1109/TMAG.2010.2043716
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spin-flop tunnel junctions subjected to strong gigahertz excitations are found to exhibit highly stable resistance states, intermediate between the two spin-uniform ground states of high and low resistance. The associated spin distributions are necessarily nonuniform and differ significantly from the ground-state anti-parallel spin configuration in their static and dynamic properties. Detailed micromagnetic modeling reveals that inplane spin vortices in dipole-coupled thin-film bilayers are stable spin configurations, where the orientation of the vortex cores and the vortex chirality play an important role in the response of the system to external magnetic fields.
引用
收藏
页码:2124 / 2127
页数:4
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