Study of plasma enhanced chemical vapor deposition of ZnO films by non-thermal plasma jet at atmospheric pressure

被引:33
|
作者
Ito, Yosuke [1 ]
Sakai, Osamu [1 ]
Tachibana, Kunihide [1 ]
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan
关键词
Zinc oxide; Plasma processing and deposition; Chemical vapor deposition; Fourier transform infrared spectroscopy (FTIR);
D O I
10.1016/j.tsf.2009.11.034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Plasma enhanced chemical vapor deposition using a non-thermal plasma jet was applied to deposition of ZnO films. Using vaporized bis(octane-2,4-dionato)zinc flow crossed by the plasma jet, the deposition rate was as high as several tens of nm/s. From the results of infrared spectra, the films deposited at the substrate temperature T-sub = 100 degrees C contained a significant amount of carbon residue, while the films prepared at T-sub=250 degrees C showed less carbon fraction. The experimental results confirmed that the plasma jet decomposed bis(octane-2,4-dionato)zinc in the gaseous phase and on the substrate, and that there should be the critical Tsub to form high-quality ZnO films in the range from 100 to 250 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3513 / 3516
页数:4
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