Current-induced giant electroresistance in La0.7Sr0.3MnO3 thin films -: art. no. 064412

被引：62
|
作者：
Debnath, AK [1 ]
Lin, JG [1 ]
机构：
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan
来源：
PHYSICAL REVIEW B | 2003年 / 67卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.67.064412
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electroresistance (ER) and magnetoresistance (MR) of La0.7Sr0.3MnO3 (LSMO) thin films with different thicknesses (t) are investigated. We found a metallic-to-insulating (M-I) transition in films with t=80 nm. For the 80-nm film, a giant room-temperature ER ratio of 11.3% is achieved with an electric current of 0.9 mA. This value of the ER ratio is four times larger resistive response than that of the MR ratio under 1 T. The enhancement of the ER value in these disordered metallic LSMO thin films is correlated with the coexistence of metallic and insulating phases and attributed to the mechanism of phonon-assisted delocalization.
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页数：5
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