Ultrahigh extinction ratio silicon micro-ring modulator by MDM resonance for high speed PAM-4 and PAM-8 signaling

被引:7
|
作者
Liu, Jiacheng [1 ]
Du, Jiangbing [1 ,2 ]
Shen, Weihong [1 ]
Zhou, Gangqiang [1 ]
Zhou, Linjie [1 ]
Zhang, Wenjia [1 ,2 ]
Xu, Ke [3 ]
He, Zuyuan [1 ,2 ]
机构
[1] Shanghai Jiao Tong Univ, Dept Elect Engn, State Key Lab Adv Opt Commun Syst & Networks, Shanghai 200240, Peoples R China
[2] Peng Cheng Lab, Shenzhen 518055, Peoples R China
[3] Harbin Inst Technol Shenzhen, Dept Elect & Informat Engn, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
TRANSMITTER;
D O I
10.1364/OE.461594
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Due to the difficulty of controlling the waveguide loss in the doping region, high-speed silicon micro-ring modulators usually have limited extinction ratio. In this work, we present a mode-division-multiplexing (MDM) resonance-enhanced silicon micro-ring modulator with an ultrahigh extinction ratio. We used a two-mode micro-ring resonator and a mode conversion circular structure to trap the light twice within a single micro-ring resonator. Proof-of-concept high extinction ratio up to 55 dB was obtained. 30 Gb/s PAM-8 and 50 Gb/s PAM-4 signaling with a bit error rate below the hard-decision forward error correction (HD-FEC) threshold were demonstrated with the fabricated modulator, indicating great potential for high-order pulse amplitude modulation (PAM). (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:25672 / 25684
页数:13
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