Fundamental properties of CdFe2O4 semiconductor thin film

被引：28
|
作者：
Miao, Fengxiu [1 ]
Deng, Zanhong [1 ]
Lv, Xianshun [1 ]
Gu, Guixin [1 ]
Wan, Songming [1 ]
Fang, Xiaodong [1 ]
Zhang, Qingli [1 ]
Yin, Shaotang [1 ]
机构：
[1] Chinese Acad Sci, Anhui Key Lab Photon Devices & Mat, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 41-42期
关键词：
Semiconductor; Thin films; Pulsed laser deposition; PULSED-LASER DEPOSITION; GAS-SENSING PROPERTIES; CADMIUM FERRITE; MFE2O4; M; CU; ZN; CD; COPRECIPITATION; OXYGEN; MG;
D O I：
10.1016/j.ssc.2010.08.010
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The fundamental properties of CdFe2O4 semiconductor thin film have been investigated. CdFe2O4 polycrystalline powder was synthesized by a co-precipitation-calcination process, and its thin film was prepared on a glass substrate by the pulsed laser deposition (PLD) method. The transmittance and reflectance spectra of the thin film indicate that the compound is an indirect bandgap material with E-g = 1.97 eV. Its absorption coefficients are larger than 10(4) cm(-1) when the wavelength is shorter than 700 nm. The electrical conductivity of the CdFe2O4 thin film was measured at different temperatures, its conductivity activation energy is about 71.9 meV. The relationship between CdFe2O4 semiconductor properties and its microstructure was discussed. (c) 2010 Elsevier Ltd. All rights reserved.
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收藏
页码：2036 / 2039
页数：4
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