High-Frequency Integrated Gate Drivers for Half-Bridge GaN Power Stage

被引：12

作者：

Zhang, Yuanzhe ^{[1
]}

Rodriguez, Miguel ^{[1
]}

Maksimovic, Dragan ^{[1
]}

机构：

[1] Univ Colorado, Dept Elect Comp & Energy Engn, Colorado Power Elect Ctr, Boulder, CO 80309 USA

来源：

2014 IEEE 15TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) | 2014年

关键词：

D O I：

10.1109/COMPEL.2014.6877120

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes three driver options for integrated half-bridge power stage using depletion-mode GaN-on-SiC 0.15 mu m RE process: an active pull-up driver, a bootstrapped driver, and a modified active pull-up driver. The approaches are evaluated and compared in 5 W, 20 V synchronous Ruck converter prototypes operating at 100 MHz switching frequency over a wide range of operating points. Measured efficiency peaks above 91% for the designs using the bootstrap and the modified active pull-up integrated drivers.

引用

页数：9

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