Electronic structure as a function of temperature for Si δ-doped quantum wells in GaAs

被引：0

作者：

Gaggero-Sager, L. M. ^{[1
]}

Moreno-Martinez, N. ^{[1
]}

Rodriguez-Vargas, I. ^{[1
]}

Perez-Alvarez, R. ^{[1
]}

Grimalsky, V. V. ^{[1
]}

Mora-Ramos, M. E. ^{[1
]}

机构：

[1] Univ Autonoma Estado Morelos, Fac Ciencias, Av Univ 1001, Cuernavaca 62210, Morelos, Mexico

来源：

PIERS 2007 BEIJING: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, PTS I AND II, PROCEEDINGS | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic structure of a delta-doped quantum well of Si in GaAs matrix is studied at different temperatures. The calculation is carried out self-consistently in the framework of the Hartree approximation. The energy levels and the occupation numbers of the discrete states are reported.

引用

页码：589 / +

页数：3

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