Ultra-sensitive Parity-Time Symmetry based Graphene FET (PT-GFET) Sensors

被引：1
|
作者：
Ou, Lu [1 ]
Liao, Shaolin [2 ]
机构：
[1] Hunan Univ, Coll Comp Sci & Elect Engn, Changsha, Hunan, Peoples R China
[2] IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA
来源：
2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2020年
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Parity-Time (PT) symmetry; graphene Field Effect Transistor (GFET); tunable gas sensors;
D O I：
10.1109/APMC47863.2020.9331324
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel ultra-sensitive Parity-Time symmetry based Graphene FET (PT-GFET) sensor is studied for gas concentration detection. The PT-GFET sensor effectively integrates the sensitivity of the PT symmetry around its Exceptional Point (EP) and the tunability of the GFET conductance. The change of GFET conductance with the gas concentration can be brought back to the EP of the PT-GFET by tuning the gate voltage on the GFET. Thus, the applied gate voltage indicates the gas concentration. The minimum detectable gas concentration has been derived and estimated based on the experimental data, which shows that PT-GFET sensors can detect gas concentration below 50 ppb.
引用
收藏
页码：1084 / 1086
页数：3
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