Optical characterization of ZnO and ZnMgO films on a-plane sapphires by molecular beam epitaxy

被引:2
|
作者
Li, SW [1 ]
Ding, CR [1 ]
Yang, GW [1 ]
Zhou, X [1 ]
机构
[1] Zhongshan Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
关键词
ZnO and ZnMgO; molecular beam epitaxy; photoluminescence; transmission spectrum;
D O I
10.1117/12.570751
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently the growth techniques of single-crystalline ZnO film promote much attention to ZnO-related materials for electronic and optoelectronic applications. ZnO and ZnMgO films were grown by radical-source molecular beam epitaxy, and the epilays on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties. The surface during growth was monitored by a reflection high-energy electron diffraction (RHEED) system. After the growth, these films were characterized by Field emission scanning electronic miroscopy, transmission spectrum, photoluminescence (PL) using 325 rim line of a He-Cd laser, and electrical properties were measured by Hall measurement. The n-type doping with Al was successfully performed up to 5 X 10(19) cm(3). Widening of bandgap energy by increasing Mg composition was observed by transmission spectrum.
引用
收藏
页码:123 / 127
页数:5
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