High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

Lateral double-implanted MOSFETs (LDIMOSFETs) fabricated on on-axis high-purity semi-insulating (HPSI) 4H-SiC substrates with gate field plates have been demonstrated for the enhancement of reverse blocking capability. The effects of gate field plate on LDIMOSFET were analyzed by simulation and experimental methods. The electric field concentration at the gate edge was successfully suppressed by a gate field plate. A high breakdown voltage of 934 V and a figure of merit of 14.6 MW/cm(2) were achieved at L-FP of 2 mu m and L-drift of 15 mu m, while those of the conventional device without a gate field plate were 744 V and 13.3 MW/cm(2), respectively. Also, the fabricated device shows stable blocking characteristics at a high temperature of 250 degrees C. The drain leakage was increased by only 22% at 250 degrees C compared with that at room temperature. (C) 2018 The Japan Society of Applied Physics