Large linear magnetoresistance in topological crystalline insulator Pb0.6Sn0.4Te

被引：17
|
作者：
Roychowdhury, Subhajit [1 ]
Ghara, Somnath [2 ]
Guin, Satya N. [1 ]
Sundaresan, A. [2 ]
Biswas, Kanishka [1 ]
机构：
[1] New Chem Unit, Bangalore, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, Karnataka, India
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 2016年 / 233卷
关键词：
Topological crystalline insulator; Lead tin telluride; Linear magnetoresistance; Band inversion; Solid solution; GIANT MAGNETORESISTANCE; NONSATURATING MAGNETORESISTANCE; COLOSSAL MAGNETORESISTANCE; THERMOELECTRIC PERFORMANCE; OSCILLATIONS; CONVERGENCE; TRANSITION;
D O I：
10.1016/j.jssc.2015.10.029
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb0.6Sn0.4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as similar to 200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb0.6Sn0.4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. (C) 2015 Elsevier Inc. All rights reserved.
引用
收藏
页码：199 / 204
页数：6
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