Silicon-on-sapphire integrated waveguides for the mid-infrared

被引:204
|
作者
Baehr-Jones, Tom [1 ]
Spott, Alexander [1 ]
Ilic, Rob [2 ]
Spott, Andrew [1 ]
Penkov, Boyan [1 ]
Asher, William [3 ]
Hochberg, Michael [1 ]
机构
[1] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
[2] Cornell Univ, Cornell NanoScale Sci & Technol Facil, Ithaca, NY 14853 USA
[3] Univ Washington, Appl Phys Lab, Seattle, WA 98195 USA
来源
OPTICS EXPRESS | 2010年 / 18卷 / 12期
关键词
INFRARED REGION; PHOTODETECTORS; GENERATION; LASERS; LIGHT;
D O I
10.1364/OE.18.012127
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Silicon waveguides are now widely used to guide radiation in the near-infrared, mainly in the wavelength range of 1.1 - 2.2 mu m. While low-loss waveguides at longer wavelengths in silicon have been proposed, experimental realization has been elusive. Here we show that single-mode integrated silicon-on-sapphire waveguides can be used at mid-infrared wavelengths. We demonstrate waveguiding at 4.5 mu m, or 2222.2 cm(-1), with losses of 4.3 +/- 0.6 dB/cm. This result represents the first practical integrated waveguide system for the mid-infrared in silicon, and enables a range of new applications. (C)2010 Optical Society of America
引用
收藏
页码:12127 / 12135
页数:9
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