Along strike variations in the electrical structure of the San Andreas Fault at Parkfield, California

被引：104

作者：

Unsworth, M ^{[1
]}

Bedrosian, P

Eisel, M

Egbert, G

Siripunvaraporn, W

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

[2] Univ Washington, Geophys Program, Seattle, WA 98195 USA

[3] Oregon State Univ, Coll Ocean & Atmospher Sci, Corvallis, OR 97331 USA

来源：

GEOPHYSICAL RESEARCH LETTERS | 2000年 / 27卷 / 18期

关键词：

D O I：

10.1029/2000GL011476

中图分类号：

P [天文学、地球科学];

学科分类号：

07 ;

摘要：

Magnetotelluric exploration has been used to image along strike variations in the electrical resistivity structure of the San Andreas Fault at Parkfield, California. A low resistivity wedge extending to a depth of several kilometers is continuous over a horizontal distance of 8 km. The base of the wedge is coincident with the shallowest microearthquakes. A change in the electrical and fluid connection of the San Andreas Fault with a low resistivity zone in the Franciscan formation is observed along the Parkfield segment.

引用

页码：3021 / 3024

页数：4

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