Optical absorption and photosensitivity of CuInxGa1-xSe2 thin film structures

被引：2
|
作者：
Rud', YV [1 ]
Rud', VY
Bodnar', IV
Gremenok, VF
机构：
[1] Leningrad State Tech Univ, St Petersburg 195251, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] State Univ Informat & Radio Elect, Minsk 220027, BELARUS
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 04期
关键词：
D O I：
10.1134/1.1187416
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Thin polycrystalline films of CuInxGa1-xSe2 (0 less than or equal to x less than or equal to 1) were fabricated by pulsed laser evaporation. Results of measurements of the optical properties, photocurrent polarization indicatrices, and spectral dependence of the photoconversion quantum yield of In-p-CuInxGa1-xSe2 structures are discussed. A window effect in the photosensitivity has been observed, and it is concluded that it is possible to use CuInxGa1-xSe2 thin films as photoconverters of solar radiation. (C) 1998 American Institute of Physics.
引用
收藏
页码：385 / 388
页数：4
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