Single-wafer polysilicon engineering for the improvement of over erase in a 0.18-μm floating-gate flash memory

被引：5

作者：

Luoh, T ^{[1
]}

Han, TT ^{[1
]}

Yang, YH ^{[1
]}

Chen, KC ^{[1
]}

Shih, HH ^{[1
]}

Hwang, YL ^{[1
]}

Hsueh, CC ^{[1
]}

Chung, H ^{[1
]}

Pan, S ^{[1
]}

Lu, CY ^{[1
]}

机构：

[1] Macronix Int Corp Ltd, Si Lab, Adv Module Proc Dev, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2003年 / 16卷 / 02期

关键词：

flash memory; grain size; over erase; polysilicon; single-wafer;

D O I：

10.1109/TSM.2003.810937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new polysilicon grain engineering technology for the improvement of over erase in 0.18-mum floating-gate flash memory has been developed with the use of single-wafer polysilicon processing, which makes it practical to use hydrogen as a process variable. The addition of hydrogen in polysilicon deposition significantly alters the reaction kinetics and produces polysilicon thin film of smooth surface, fine and uniformly distributed grains. Such a micrograin polysilicon possesses show excellent high-temperature stability. The benefits of the micrograin polysilicon are to be demonstrated through its improvement in over erase of a 0.18-mum floating-gate flash memory.

引用

页码：155 / 164

页数：10

共 4 条

[1] Effect of Floating-Gate Polysilicon Depletion on the Erase Efficiency of Flash Memories
Spessot, Alessio
Compagnoni, Christian Monzio
Farina, Fabrizio
Calderoni, Alessandro
Spinelli, Alessandro S.
Fantini, Paolo
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) : 647 - 649
[2] Single-wafer gate dielectric technologies for sub-0.18 μm applications
Miner, G
Xing, G
Yokota, Y
Jaggi, A
Sanchez, E
Chen, CL
Lopes, D
GATE DIELECTRIC INTEGRITY: MATERIAL, PROCESS, AND TOOL QUALIFICATION, 2000, 1382 : 122 - 131
[3] Erase voltage impact on 0.18μm triple self-aligned split-gate flash memory endurance
董耀旗
孔蔚然
Nhan Do
王序伦
李荣林
半导体学报, 2010, (06) : 74 - 77
[4] Erase voltage impact on 0.18 mu m triple self-aligned split-gate flash memory endurance
Dong Yaoqi
Kong Weiran
Nhan Do
Wang Shiuh-Luen
Gabriel, Lee
JOURNAL OF SEMICONDUCTORS, 2010, 31 (06)

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