The effect of substrate temperature on the optical properties of SnSb4S7 thin films

被引:8
|
作者
Jebali, A. [1 ]
Ben Rabeh, M. [1 ]
Khemiri, N. [1 ]
Kanzari, M. [1 ,2 ]
机构
[1] Univ Tunis El Manar, Lab Photovolta & Mat Semicond, Dept Genie Ind, Ecole Natl Ingn Tunis, Tunis 1002, Tunisia
[2] Univ Tunis, Lab Photovolta & Mat Semicond, Ecole Natl Ingn Tunis, Inst Preparatoire Etud Ingn Tunis Montfleury, Tunis, Tunisia
关键词
Semiconductors; Thin films; Vapor deposition; X-ray diffraction; ELECTRICAL-PROPERTIES; COMPOUND;
D O I
10.1016/j.materresbull.2014.10.047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, SnSb4S7 thin films were prepared by vacuum evaporation method, and the effect of substrate temperature on the structural and optical properties were investigated. Substrate temperature was varied from room temperature to 170 degrees C. Optical constants such as band gap, absorption coefficient, extinction coefficient, refractive index, and dielectric constant were determined from the measured transmittance and reflectance spectra in the wavelength range between 300 and 1800 nm using the envelope method. The dispersion behavior of the refractive index was studied in terms of the single-oscillator Wemple-DiDomenico (W-D) model, and the physical parameters of the refractive index dispersion and the dispersion energy were found. The electrical free carrier susceptibility and the carrier concentration of the effective mass ratio were estimated according to the Spitzer-Fan model. Furthermore, the optical band gap values were calculated by the W-D model and the Tauc model, respectively. The major result of this study is optical, structural, and dielectric properties of SnSb4S7 could be modified with the different substrate temperature. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:363 / 368
页数:6
相关论文
共 50 条
  • [1] Investigation of structural and optical properties of the sulfosalt SnSb4S7 thin films
    Drissi, N.
    Gassoumi, A.
    Boughzala, H.
    Ouerfelli, J.
    Kanzari, M.
    JOURNAL OF MOLECULAR STRUCTURE, 2013, 1047 : 61 - 65
  • [2] Structural, morphological and optical properties of the sulfosalt material SnSb4S7 thin films
    Jebali, A.
    Khemiri, N.
    Aousgi, F.
    Ben Rabeh, M.
    Kanzari, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 27 : 1057 - 1064
  • [3] The effect of annealing in N2 atmosphere on the physical properties of SnSb4S7 thin films
    Jebali, A.
    Khemiri, N.
    Kanzari, M.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 673 : 38 - 46
  • [4] Electrical characterization of SnSb4S7 thin films by impedance spectroscopy
    Trabelsi, Imen
    Jebali, Ahlem
    Kanzari, Mounir
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (05) : 4326 - 4335
  • [5] Electrical characterization of SnSb4S7 thin films by impedance spectroscopy
    Imen Trabelsi
    Ahlem Jebali
    Mounir Kanzari
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 4326 - 4335
  • [6] Effect of Substrate Temperature on Optical Properties of BCN Thin Films
    Todi, Vinit O.
    Sundaram, Kalpathy B.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (10) : G49 - G51
  • [7] First principles study of electronic and optical properties of the ternary SnSb4S7 using modified Becke-Johnson potential
    Gassoumi, A.
    Meradji, H.
    Kamoun-Turki, N.
    Ghemid, S.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 40 : 262 - 266
  • [8] Effect of air annealing on dispersive optical constants and electrical properties of SnSb2S4 thin films
    Fadhli, Y.
    Rabhi, A.
    Kanzari, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 26 : 282 - 287
  • [9] EFFECT OF SUBSTRATE TEMPERATURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF NiTsPc THIN FILMS
    Hani, Mohammed Yarub
    Al-Aarajiy, Addnan H.
    Abdul-Lettif, Ahmed M.
    SURFACE REVIEW AND LETTERS, 2020, 27 (03)
  • [10] THE CRYSTAL STRUCTURE OF SnSb4S7, A NEW MEMBER OF THE MENEGHINITE HOMOLOGOUS SERIES
    Topa, Dan
    Makovicky, Emil
    Schimper, Herman J.
    Stadler, Andreas
    Basch, Angelika
    Dittrich, Herbert
    Amthauer, Georg
    CANADIAN MINERALOGIST, 2010, 48 (05): : 1119 - 1126