Effect of Cr content on mechanical and electrical properties of Ni-Cr thin films
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作者:
Danisman, M.
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Yildiz Tech Univ, Fac Chem Met, Dept Met & Mat Engn, TR-34220 Istanbul, TurkeyYildiz Tech Univ, Fac Chem Met, Dept Met & Mat Engn, TR-34220 Istanbul, Turkey
Danisman, M.
[1
]
Cansever, N.
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Yildiz Tech Univ, Fac Chem Met, Dept Met & Mat Engn, TR-34220 Istanbul, TurkeyYildiz Tech Univ, Fac Chem Met, Dept Met & Mat Engn, TR-34220 Istanbul, Turkey
Cansever, N.
[1
]
机构:
[1] Yildiz Tech Univ, Fac Chem Met, Dept Met & Mat Engn, TR-34220 Istanbul, Turkey
NiCr has been a popular choice for strain gage and electrical resistance application in various fields of engineering and science. Therefore, the phases at this binary system have been thoroughly investigated in the last decade. For Ni-Cr thin film production, sputtering from alloy targets is mostly discussed as a deposition method. However, Cr content in Ni-Cr alloy has major influence on different properties of the NiCr thin films. In order to investigate the effect of Cr content in Ni-Cr system, Ni over Cr thin films with a total thickness of 500 nm was deposited on glass substrates with different Cr/Ni thickness ratios as 0.1, 0.25 and 0.6. After deposition, thin films were annealed at 600 degrees C for 180s in a Rapid Thermal Process (RTP) system to investigate the effect of different Cr contents on phase formation. The phase formations and lattice parameters were analyzed with low glancing angle X-ray Diffraction (XRD) and the Cr content in the thermally treated thin films was calculated with Energy Dispersive Spectrometry (EDS). Also, film composition along depth was also calculated by EDS analysis from the cross-section view of the annealed samples. Field Emission Scanning Electron Microscope (FESEM) images were taken from the cross-section view of the samples in order to observe the final film thicknesses and structures. Sheet resistance of each sample was measured with linear four point probe technique and resistivity of each phase was calculated. Furthermore, nanohardness and Young's Modulus of each sample was calculated by using nanoindentation method. (C) 2009 Elsevier B.V. All rights reserved.
机构:
Bhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, India
Homi Bhabha Natl Inst, Mumbai 400085, Maharashtra, IndiaBhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, India
Keskar, Nachiket
Krishna, K. V. Mani
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Bhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, IndiaBhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, India
Krishna, K. V. Mani
Gupta, Chiradeep
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Bhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, IndiaBhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, India
Gupta, Chiradeep
Singh, J. B.
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Bhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, IndiaBhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, India
Singh, J. B.
Tewari, R.
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Bhabha Atom Res Ctr, Mat Sci Div, Mat Grp, Mumbai 400085, Maharashtra, IndiaBhabha Atom Res Ctr, Mech Met Div, Mat Grp, Mumbai 400085, Maharashtra, India
机构:
Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
NingBo Univ Technol, Ningbo 315016, Zhejiang, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
Lai, Lifei
Zeng, Wenjin
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Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
Zeng, Wenjin
Fu, Xianzhu
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Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
Fu, Xianzhu
Sun, Rong
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Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
Sun, Rong
Du, Ruxu
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Chinese Univ Hong Kong, Shatin, Hong Kong, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
机构:
HUNGARIAN ACAD SCI,TECH PHYS RES INST,HUNGARIAN MEASURING INSTRUMENT RES INST,H-1361 BUDAPEST 5,HUNGARYHUNGARIAN ACAD SCI,TECH PHYS RES INST,HUNGARIAN MEASURING INSTRUMENT RES INST,H-1361 BUDAPEST 5,HUNGARY
LOMNICZY, M
BARNA, A
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HUNGARIAN ACAD SCI,TECH PHYS RES INST,HUNGARIAN MEASURING INSTRUMENT RES INST,H-1361 BUDAPEST 5,HUNGARYHUNGARIAN ACAD SCI,TECH PHYS RES INST,HUNGARIAN MEASURING INSTRUMENT RES INST,H-1361 BUDAPEST 5,HUNGARY
BARNA, A
BARNA, PB
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HUNGARIAN ACAD SCI,TECH PHYS RES INST,HUNGARIAN MEASURING INSTRUMENT RES INST,H-1361 BUDAPEST 5,HUNGARYHUNGARIAN ACAD SCI,TECH PHYS RES INST,HUNGARIAN MEASURING INSTRUMENT RES INST,H-1361 BUDAPEST 5,HUNGARY