Near band-edge optical properties of cubic GaN

被引：11
|
作者：
Fernandez, JRL
Noriega, OC
Soares, JANT
Cerdeira, F
Meneses, EA
Leite, JR
As, DJ
Schikora, D
Lischka, K
机构：
[1] Univ Estadual Campinas, Inst Fis GW, BR-17083970 Campinas, SP, Brazil
[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[3] Univ Gesamthsch Paderborn, D-33095 Paderborn, Germany
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 3-4期
关键词：
epitaxy; thin films; preparing and processing; phenomena and properties;
D O I：
10.1016/S0038-1098(02)00768-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We used photoluminescence, photoluminescence excitation spectroscopy (PLE) and photoreflectance (PR) to study the optical properties of thin films of cubic GaN, deposited by plasma-assisted molecular beam epitaxy on a GaAs (001) substrate. Our results show a clear step-like absorption edge, resulting from the merging of the free exciton with the continuum. Quantitative values for the absorption-edge energy and lifetime broadening are obtained. The dependence of the latter on temperature, as well as some features of the PR spectrum, reveal that the cubic material still presents residual strain and distortions. A secondary absorption-edge due to hexagonal inclusions is also observed in the PLE spectra. (C) 2003 Elsevier Science Ltd. All rights reserved.
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页码：205 / 208
页数：4
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