Ferroelectric properties and memory characteristics of Pb(Zr0.52Ti0.48)O3 thin films crystallized by hot isostatic pressing

Pb(Zr0.52Ti0.48)O-3 films with highly uniform c-axis orientation were fabricated on PbTiO3 (PT)/Pt(111)/SiO2/Si(100) substrates by hot isostatic pressing (HIP) from the amorphous state. All the PZT samples HIP-treated 500degreesC for I h under gas pressures of 1.0-2.0 MPa showed the preferred (00 1) orientation with c-axis orientation. alpha > 0.80. The relative permittivity tended to decrease gently with increasing HIP pressure, whereas the dielectric loss increased almost linearly in the 1.5-100 MPa. The PZT sample treated at 1.5 MPa had a symmetric and slim hysteresis loop shape, with a remanent polarization, P-r = 15 muC/cm(2) and coercive field, E-c = 60 kV/cm. Both samples treated at 10 and 100 MPa exhibited almost the fatigue-free behavior that resisted degradation even after 3 x 10(10) cycles.