Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a graphene-based saturable absorber

被引：9
|
作者：
Serres, J. M. [1 ]
Loiko, P. [1 ,2 ]
Mateos, X. [1 ]
Jambunathan, V. [1 ,3 ]
Yumashev, K. [2 ]
Griebner, U. [4 ]
Petrov, V. [4 ]
Aguilo, M. [1 ]
Diaz, F. [1 ]
机构：
[1] Univ Rovira & Virgili, Fis & Cristal Log Mat & Nanomat FiCMA FiCNA, Campus Sescelades,C Marcel Li Domingo S-N, E-43007 Tarragona, Spain
[2] Belarusian Natl Tech Univ, Ctr Opt Mat & Technol, 65-17 Nezavisimosti Ave, Minsk 220013, BELARUS
[3] Inst Phys ASCR, HiLASE Ctr, Za Radnici 828, Dolni Brezany 25241, Czech Republic
[4] Max Born Inst Nonlinear Opt & Short Pulse Spect, Max Born Str 2a, D-12489 Berlin, Germany
来源：
LASER PHYSICS LETTERS | 2016年 / 13卷 / 02期
关键词：
Q-switched laser; graphene; double tungstates; holmium ion; energy transfer; ENERGY-TRANSFER; TM; OPERATION; MANIFOLDS;
D O I：
10.1088/1612-2011/13/2/025801
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The first Ho microchip laser passively Q-switched using a graphene-based saturable absorber is demonstrated based on a Tm,Ho:KLu(WO4)(2) crystal cut along the N-g-axis. A maximum average output power of 74 mW is extracted from the diode-pumped laser at 2061 nm with a slope efficiency of 4%. Pulses as short as 200 ns with an energy of similar to 0.2 mu J are obtained at a repetition rate of 340 kHz. The energy transfer (ET), F-3(4) (Tm3+) <-> I-5(7) (Ho3+) is studied, yielding ET parameters of P-28 = 1.69 and P-71 = 0.15 x 10(-22) cm(3) mu s(-1), revealing the strong prevalence of direct ET.
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页数：5
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