Distributed Pass Gates in Power Delivery Systems With Digital Low-Dropout Regulators

被引:1
|
作者
Ciprut, Albert [1 ]
Friedman, Eby G. [1 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
Logic gates; Topology; Power grids; Resistance; Regulators; Metals; Voltage control; Digital low-dropout (LDO); on-chip voltage regulator; parasitic resistance; power delivery noise; STABILITY; PROCESSOR;
D O I
10.1109/TVLSI.2019.2941967
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
On-chip digital low-dropout (LDO) regulators enable fast dynamic voltage scaling, reducing power consumption. Integrating these regulators into a highly resistive environment has complicated the design of power delivery systems. With the increasing sensitivity of complex integrated systems to power noise, effective approaches to distribute on-chip LDOs are needed due to the limited metal resources. In this article, a methodology is proposed to distribute the pass gates of a system of on-chip digital LDOs. The distribution of the pass gates considers the location of the load currents to reduce voltage variations across the power grid. The proposed pass gate distribution topology reduces the maximum voltage variations across the grid, on average, by two to three times under nonuniform load distributions.
引用
收藏
页码:414 / 420
页数:7
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