On inductively coupled plasmas for next-generation processing

被引：0
|
作者：
Lee, YK
Lee, DS
Bai, KH
Chung, CW
Chang, HY
机构：
[1] Hanyang Univ, Div Elect & Comp Engn, Seongdong Gu, Seoul 133791, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
来源：
SURFACE & COATINGS TECHNOLOGY | 2003年 / 169卷 / 169-170期
关键词：
inductively coupled plasma; plasma uniformity; parallel resonance antenna (PRA); large-area plasma source;
D O I：
10.1016/S0257-8972(03)00050-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electron heating mechanism in ICP is briefly reviewed in the collisionless regime. We suggest a parallel resonance antenna (PRA) that by varying capacitance in a capacitor (C-v) as an external parameter can control not only the antenna current distribution, but also plasma uniformity. Radial plasma uniformity can be controlled and optimized by controlling coil currents between the coil segments, operating pressure, and chamber geometry in a recently developed antenna system. These results are consistent with the previous modeling paper [Appl. Phys. Lett. 77 (2000) 492]. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：20 / 23
页数：4
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