Numerical study of the effect of magnetic fields in dissolution of silicon into germanium melt

被引：1
|
作者：
Kidess, A. [1 ]
Armour, N. [1 ]
Dost, S. [1 ]
机构：
[1] Univ Victoria, Crystal Growth Lab, Victoria, BC V8W 3P6, Canada
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 08期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Diffusion; Mixing; Dissolution; Growth from solution; Germanium silicon alloys; Semiconducting silicon alloys; BRIDGMAN GROWTH; SIGE; CRYSTALS;
D O I：
10.1016/j.jcrysgro.2009.10.015
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Three-dimensional numerical simulations were carried out for the dissolution process of silicon into germanium melt with and without the application of a static vertical magnetic field under the same conditions of experiments. The computed concentration fields in the melt show similar structures to the experimentally measured concentration profiles from the samples processed. The application of magnetic field makes the concentration profiles smoother. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1402 / 1406
页数：5
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