Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization

被引：0
|
作者：
Xie, Lei [1 ]
Shao, Yang [1 ]
Xiao, Xiang [1 ]
Zhang, Letao [1 ]
Bi, Xiaobin [1 ]
Zhang, Shengdong [1 ]
机构：
[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
来源：
2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin-film transistors based on anodized indium-tin-oxide (ITO) active layer and anodic tantalum oxide (Ta2O5) gate dielectric were investigated. The electrical and optical properties of ITO film can be affected by an anodization treatment. The anodized ITO TFT shows an on/off current ratio of 10(8), a saturation mobility of 28.8 cm(2)V(-1)s(-1), a subthreshold swing of 0.51 V/dec, and a threshold voltage of -2.5V. It is also shown that the ITO film shows higher resistivity and porous structure after anodized at various anodization voltage V-a. Also, the surface of the no film becomes less porous and the resistivity rises as the anodization current density J(a) increases.
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页码：101 / 103
页数：3
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