Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

被引：18
|
作者：
Sun, Jianwen [1 ]
Zhan, Teng [2 ,3 ]
Liu, Zewen [4 ]
Wang, Junxi [2 ,3 ]
Yi, Xiaoyan [2 ,3 ]
Sarro, Pasqualina M. [1 ]
Zhang, Guoqi [1 ,3 ]
机构：
[1] Delft Univ Technol, Dept Microelect, NL-2628 CD Delft, Netherlands
[2] Chinese Acad Sci, Res & Dev Ctr Solid State Lighting, Inst Semicond, Qinghua East Rd 35A, Beijing 100083, Peoples R China
[3] State Key Lab Solid State Lighting, Beijing 100083, Peoples R China
[4] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 12期
关键词：
pulsed heating; AlGaN; GaN; UV detector; UV;
D O I：
10.7567/1882-0786/ab4f5b
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively accelerated by applying pulsed heating. The decay time is significantly reduced from 175 & xfffd;s by DC heating to 116 & xfffd;s by 50 & xfffd;Hz pulsed heating at the same power (280 & xfffd;mW). With the same pulse duty cycle and a 50 & xfffd;Hz pulsed heating frequency, a reduction of 30%?45% in decay time is measured compared to DC heating.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating
    Hou, Minmin
    So, Hongyun
    Suria, Ateeq J.
    Yalamarthy, Ananth Saran
    Senesky, Debbie G.
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (01) : 56 - 59
  • [2] Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
    Elhamri, S
    Saxler, A
    Mitchel, WC
    Elsass, CR
    Smorchkova, IP
    Heying, B
    Haus, E
    Fini, P
    Ibbetson, JP
    Keller, S
    Petroff, PM
    DenBaars, SP
    Mishra, UK
    Speck, JS
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6583 - 6588
  • [3] Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector
    Li, JZ
    Lin, JY
    Jiang, HX
    Khan, MA
    APPLIED PHYSICS LETTERS, 1998, 72 (22) : 2868 - 2870
  • [4] Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure
    Li, JZ
    Lin, JY
    Jiang, HX
    Khan, MA
    Chen, Q
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 1227 - 1230
  • [5] Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
    Li, B. K.
    Chen, K. J.
    Lau, K. M.
    Ge, W. K.
    Wang, J. N.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1892 - +
  • [6] Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors
    Guo, Jiarui
    Gu, Yan
    Liu, Yushen
    Liang, Fangzhou
    Chen, Wei
    Xie, Feng
    Yang, Xifeng
    Qian, Weiying
    Zhang, Xiangyang
    Chen, Guoqing
    Yang, Guofeng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (05) : 2352 - 2357
  • [7] Interface effects on the persistent photoconductivity in thin GaN and AlGaN films
    Seifert, OP
    Kirfel, O
    Munzel, M
    Hirsch, MT
    Parisi, J
    Kelly, M
    Ambacher, O
    Stutzmann, H
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [8] High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure
    Lyu, Qifeng
    Jiang, Huaxing
    Lu, Xing
    Lau, Kei May
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [9] GaN/AlGaN heterostructure devices: Photodetectors and field-effect transistors
    Shur, MS
    Khan, MA
    MRS BULLETIN, 1997, 22 (02) : 44 - 50
  • [10] Self Heating of AlGaN/GaN HEMTs in Pulsed Operation
    Weatherford, T.
    Wang, Y.
    Tracey, S.
    2009 ROCS WORKSHOP, PROCEEDINGS, 2009, : 59 - 69
12345