Theoretical analysis of the effect of temperature dependence of Auger coefficient on the turn-on time delay of uncooled semiconductor laser diodes

被引：6

作者：

Ab-Rahman, Mohammad Syuhaimi ^{[1
]}

Hassan, Mazen Radhe ^{[1
]}

机构：

[1] Univ Kebangsaan Malaysia, Natl Univ Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn,Comp & Network Secur, Bangi 43600, Selangor, Malaysia

来源：

OPTICS COMMUNICATIONS | 2010年 / 283卷 / 11期

关键词：

Auger recombination coefficient; Modeling; Semiconductor laser diodes; Temperature effect; Turn-on time delay; RECOMBINATION; RELIABILITY; MODULATION; SYSTEMS;

D O I：

10.1016/j.optcom.2010.01.071

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, a novel interpretation of the effect of Auger recombination coefficient (C) on the turn-on time delay (t(on)) of semiconductor laser diodes (SLDs) is presented. To the date, the well-known conclusion is that the main effect of C is to decrease t(on). This is because the earlier studies were based on less physical assumptions. Contrarily, we show that the general effect of C is to increase t(on). This conclusion is supported by including the effect of temperature of operation (T) on t(on) of uncooled SLDs. Advanced analytical model is presented to determine t(on) analytically and in term of nonradiative (A), radiative (B) and C recombination coefficients. The derived model can be applied to bulk and multiple quantum-well (MQW) long-wavelength SLDs at any value of temperature of operation degree (T) within the range 25-85 degrees C. The temperature dependence of t(on) is calculated according to the temperature dependences of C and threshold carrier density (N-th). The temperature dependence of the latter is calculated according to the temperature dependence of laser cavity parameters and not by the well-known Parkovian relationship. Numerical and analytical results show that t(on) increases as T increases due to increasing of N-th, and C which its effect dominates at high temperature degrees. In addition, we show that the effect of temperature dependence of t(on) in MQW SLD is smaller than the bulk one. Moreover, MQW SLD needs a lower injection current than the bulk one to achieve the same value of t(on). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2378 / 2384

页数：7

共 18 条

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