Fabrication and characterization of Co-ferrite thin films for a ferromagnetic barrier in a spin-filtering device operating at room temperature

被引：0
|
作者：
Goto, R. [1 ]
Takahashi, Y. K.
Tezuka, N.
Inomata, K.
Sugimoto, S.
Hono, K.
机构：
[1] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2007年 / 43卷 / 06期
关键词：
Co-ferrite; spintronics; spin-filtering devices; spin-polarized current sources; MAGNETORESISTANCE; POLARIZATION;
D O I：
10.1109/TMAG.2007.893696
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.
引用
收藏
页码：2797 / 2799
页数：3
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