Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors

被引：0
|
作者：
Datta, S
Roenker, KP
Cahay, MM
Lunardi, LM
机构：
[1] Univ Cincinnati, Dept Elect & Comp Engn & Comp Sci, Cincinnati, OH 45221 USA
[2] AT&T Labs Res, Red Bank, NJ 07701 USA
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 07期
基金：
美国国家科学基金会;
关键词：
Pnp; heterojunction; bipolar; transistor; InP;
D O I：
10.1016/S0038-1101(00)00055-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pnp InP/InGaAs heterojunction bipolar transistors have been modeled using a modified Gummel-Poon model, and the results are compared with experimental measurements and results from a commercial simulator. The model provides a good description of the transistor's high frequency performance and describes the falloff in device performance at high current densities. The model overestimates the current gain at low current densities by neglecting hole recombination in the base side of the emitter-base space charge region. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1331 / 1333
页数：3
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