Substrate temperature influenced structural, electrical and optical properties of dc magnetron sputtered MoO3 films

被引:46
|
作者
Uthanna, S. [1 ]
Nirupama, V. [1 ]
Pierson, J. F. [2 ]
机构
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[2] Nancy Univ, Ecole Mines, CNRS, Inst Jean Lamour,UMR 7198,Dept CP2S, F-54042 Nancy, France
关键词
Molybdenum oxide; Reactive sputtering; Structure; Electrical and optical properties; OXIDE THIN-FILMS; COLORATION;
D O I
10.1016/j.apsusc.2009.11.086
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molybdenum oxide (MoO3) films were deposited on glass and (1 1 1) silicon substrates by sputtering of metallic molybdenum target in an oxygen partial pressure of 2 x 10(-4) mbar and different substrate temperatures in the range 303-623 K using dc magnetron sputtering technique. X-ray photoelectron spectrum of the films formed at 303 K showed asymmetric Mo 3d(5/2) and Mo 3d(3/2) peaks due to the presence of mixed oxidation states of Mo5+ and Mo6+ while those deposited at substrate temperatures >= 473 K were in Mo6+ oxidation state of MoO3. The films formed at substrate temperatures >= 473 K were polycrystalline in nature with orthorhombic alpha-phase MoO3. Fourier transform infrared spectra of the films showed an absorption band at 1000 cm(-1) correspond to the stretching vibration of Mo=O, the characteristic of the alpha-MoO3 phase. The electrical resistivity increased from 3.3 x 10(3) to 8.3 x 10(4) Omega cm with the increase of substrate temperature from 303 to 473 K respectively due to improvement in the crystallinity of the films. Optical band gap of the films increased from 3.03 to 3.22 eV with the increase of substrate temperature from 303 to 523 K. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3133 / 3137
页数:5
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