Dielectric properties of magnesium oxide at microwave frequency

被引:24
|
作者
Chen, Jhih-Yong [1 ]
Hsu, Wei-Hung [2 ]
Huang, Cheng-Liang [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Inst Engn Management, Tainan 70101, Taiwan
关键词
Crystal growth; Dielectric response; MG(ZR0.05TI0.95)O-3 CERAMICS; SINTERING TEMPERATURE; CRYSTAL-STRUCTURE;
D O I
10.1016/j.jallcom.2010.05.114
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
To understand the role of a residual MgO phase plays inside a ceramic body, a simple magnesium oxide ceramics was prepared to investigate its microwave dielectric properties. The epsilon(r) and tau(f) values of specimens using simple MgO only vary in a small range at the investigated temperatures (1400-1550 degrees C) implying they are not sensitive to the sintering temperature. However, the Q x f is strongly related to the density of the ceramics and a high Q x f of similar to 113,600 GHz can be achieved by sintering the specimen at 1490 degrees C for 4 h. It indicates MgO may exist as a low-loss dielectric inside a dense ceramic body at microwave frequency. (C) 2010 Published by Elsevier B.V.
引用
收藏
页码:284 / 287
页数:4
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