FIB-based technique for stress characterization on thin films for reliability purposes

被引：29
|
作者：
Sabate, N.
Vogel, D.
Keller, J.
Gollhardt, A.
Marcos, J.
Gracia, I.
Cane, C.
Michel, B.
机构：
[1] Ctr Nacl Microelect, Bellaterra 08193, Spain
[2] IZM, Micro Mat Ctr Berlin, Franhofer Inst Reliabil & Microintegrat, D-13355 Berlin, Germany
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期
关键词：
residual stress; hole-drilling method; slot milling; focused ion beam;
D O I：
10.1016/j.mee.2007.01.272
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a novel approach of stress measurement based on the combined imaging-milling capabilities of a FIB equipment. This technique consists on the scaling down of two measurement techniques based on stress-relaxation, the slot and the hole-drilling methods. The main aspects of both approaches at a microscale are described and illustrated and some examples of their application to thin films are presented. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1783 / 1787
页数：5
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