Kinetic magnetism at the interface between Mott and band insulators

被引:4
|
作者
Iaconis, Jason [1 ]
Ishizuka, Hiroaki [2 ]
Sheng, D. N. [3 ]
Balents, Leon [2 ]
机构
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Kavli Inst Theoret Phys, Santa Barbara, CA 93106 USA
[3] Calif State Univ Northridge, Dept Phys & Astron, Northridge, CA 91330 USA
基金
美国国家科学基金会; 加拿大自然科学与工程研究理事会;
关键词
GUTZWILLER APPROXIMATION; ELECTRON-GAS; T-J; FERROMAGNETISM; TRANSITION;
D O I
10.1103/PhysRevB.93.155144
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that the interplay of a high-density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott and band insulator interface. Our study is based upon a bilayer Hubbard model at U = infinity with a potential difference between the two layers. We combine analytic results with DMRG simulations to show that magnetism, and especially ferromagnetism, is greatly enhanced relative to the proximity of the two subsystems. The results are potentially relevant to recent experiments, suggesting magnetism in RTiO3/SrTiO3 heterostructures.
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页数:6
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