Low-temperature-fabrication and the preferred growth mechanism of Ag nanowires for stabling SnO2 film

A low-temperature-fabrication of Ag nanowires (NWs) was introduced for cost cutting and safety. Nucleating at room temperature (RT) for about 6 h and growing at 50-70 degrees C favored the formation of Ag NWs with the aspect ratio of more than 1000. The preferred growth mechanism of Ag NWs was the stacking of (2 2 0) or (2 (2) over bar 0) planes, which were the twinning planes of high-density twin crystals. Coating the as-prepared Ag NWs on the surface of SnO2 transparent semiconductor film and heat treating the bilayer film at 200-300 degrees C, the adhesion property and conductive performance of SnO2 film were significantly enhanced.