Nonequilibrium carrier dynamics in self-assembled InGaAs/GaAs quantum dots

被引：0

作者：

Wesseli, Markus ^{[1
]}

Ruppert, Claudia ^{[1
]}

Trumm, Stephan ^{[1
]}

Betz, Markus ^{[1
,2
,3
]}

机构：

[1] Tech Univ Munich, Phys Dept E11, Garching, Germany

[2] Univ Toronto, Phys Dept, Toronto, ON, Canada

[3] Univ Toronto, Inst Opt Sci, Toronto, ON, Canada

来源：

ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS XI AND SEMICONDUCTOR PHOTODETECTORS IV | 2007年 / 6471卷

关键词：

self-assembled quantum dots; nonequilibrium carrier dynamics; ultrafast spectroscopy;

D O I：

10.1117/12.695522

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carrier dynamics in InGaAs/GaAs quantum dots is analyzed with highly sensitive femtosecond transmission spectroscopy. In a first step, measurements on a large ensemble of nanoislands reveal the dynamical electronic filling of quantum dots from the surrounding wetting layer. Most interestingly, we find a spin-preserving phonon mediated scattering into fully localized states within a few picoseconds. Then, individual artificial atoms are isolated with metallic shadow masks. For the first time, a single self-assembled quantum dot is addressed in an ultrafast transmission experiment. We find bleaching signals in the order of 10(-5) that arise from individual interband transitions of one quantum dot. As a result, we have developed an ultrafast optical tool for both manipulation and read-out of a single self-assembled quantum dot.

引用

页数：8

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