Controlled Al-doped single-crystalline silicon nitride nanowires synthesized via pyrolysis of polymer precursors

被引：41
|
作者：
Yang, Weiyou [1 ]
Wang, Huatao
Liu, Shuzhen
Xie, Zhipeng
An, Linan
机构：
[1] Ningbo Univ Technol, Sch Mech Engn, Ningbo 315016, Peoples R China
[2] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[3] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA
来源：
JOURNAL OF PHYSICAL CHEMISTRY B | 2007年 / 111卷 / 16期
关键词：
D O I：
10.1021/jp070642+
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Al-doped single-crystalline Si3N4 nanowires were synthesized by catalyst-assisted pyrolysis of polymeric precursors. The doping levels can be controlled by tailoring the Al concentration in the precursors. It is found that the Al concentration has a significant effect on the shape, sizes, and phase compositions of the synthesized Si3N4 low-dimensional nanomaterials. The photoluminescence measurements revealed that the Al dopants have a profound effect on the emission behavior. The current study provides a simple way to realize the controlled doping in Si3N4 nanomaterials, which could be useful for applications in optoelectronic nanodevices.
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收藏
页码：4156 / 4160
页数：5
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