GaN-nanowire-based dye-sensitized solar cells

被引：25
|
作者：
Chen, X. Y. [1 ]
Yip, C. T. [1 ]
Fung, M. K. [1 ]
Djurisic, A. B. [1 ]
Chan, W. K. [2 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 100卷 / 01期
关键词：
RECOMBINATION; PHOTOVOLTAICS; TRANSPORT; FILMS;
D O I：
10.1007/s00339-010-5580-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO (x) core-shell structures, and we show that coating of GaN nanowires with a TiO (x) shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm(2) and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.
引用
收藏
页码：15 / 19
页数：5
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