Design and producibility optimization of single-bias DC coupled 10Gbit/s MMIC transimpedance amplifiers using a GaAS enhancement/depletion PHEMT technology.

被引：0

作者：

Corso, V ^{[1
]}

Bastida, EM ^{[1
]}

Patiri, V ^{[1
]}

Finardi, CA ^{[1
]}

机构：

[1] CPqD, Ctr Res & Dev, BR-13088061 Campinas, SP, Brazil

来源：

1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS | 1999年

关键词：

MMIC's; optical receivers; preamplifiers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design, fully market driven, is described of a D.C. coupled monolithic amplifier for 10Gbit/s optical communications with 8.7GHz operational bandwidth, 58dB Omega transimpedance gain arid equivalent input noise current density lower than 6pA/root Hz. The paper also discusses some important design issues on cost and producibility optimization of the circuit, which makes use of an original mixed inductive and capacitive peaking technique and of an advanced 0.2 mum gate length enhancement-depletion GaAs HEMT technology.

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页码：261 / 263

页数：3