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Non-coherent growth patches in pseudomorphic films: Unusual strain relief in electrodeposited Co on Cu(001)

被引：11
|
作者：
Schindler, W
Koop, T
Kazimirov, A
Scherb, G
Zegenhagen, J
Schultz, T
Feidenhans'l, R
Kirschner, J
机构：
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[3] Riso Natl Lab, DK-4000 Roskilde, Denmark
来源：
SURFACE SCIENCE | 2000年 / 465卷 / 03期
关键词：
cobalt; copper; electrochemical methods; growth; solid-liquid interfaces; surface relaxation and reconstruction; X-ray scattering; diffraction; and reflection;
D O I：
10.1016/S0039-6028(00)00779-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The critical thickness for pseudomorphic Co growth on Cu(001) is found to be independent of the onset of lattice constant relaxation. The pseudomorphic film relieves strain by local formation of orthomorphic growth patches within the pseudomorphic matrix. This unusual relaxation mechanism of electrodeposited films is in contrast to current belief of film relaxation. Moreover, a tetragonal distortion of the fee Co unit cell in the orthomorphic growth regime indicates residual strain in films of up to at least 100 monolayers thickness. (C) 2000 Elsevier Science B.V. All rights reserved.
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收藏
页码：L783 / L788
页数：6
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