Analyses of Diamond Disk Substrate Wear and Diamond Microwear in Copper Chemical Mechanical Planarization Process

被引:14
|
作者
Meled, Anand [1 ]
Zhuang, Yun [1 ,2 ]
Wei, Xiaomin [1 ]
Cheng, Jiang [1 ]
Sampurno, Yasa Adi [1 ,2 ]
Borucki, Leonard [2 ]
Moinpour, Mansour [3 ]
Hooper, Don [4 ]
Philipossian, Ara [1 ,2 ]
机构
[1] Univ Arizona, Dept Chem & Environm Engn, Tucson, AZ 85721 USA
[2] Araca Inc, Tucson, AZ 85718 USA
[3] Intel Corp, Santa Clara, CA 95052 USA
[4] Intel Corp, Rio Rancho, NM 87124 USA
关键词
chemical mechanical polishing; corrosion; diamond; discs (structures); mass spectroscopic chemical analysis; planarisation; scanning electron microscopy; slurries; wear;
D O I
10.1149/1.3273077
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Diamond disk substrate wear and diamond microwear in the copper chemical mechanical planarization process were investigated in this study. Three types of disks (D1, D2, and D3) made by three different manufacturers were analyzed. For each type of disk, 24 h static etch tests were performed with Fujimi PL-7103 and Cabot Microelectronics Corporation iCue 600Y75 slurries at 25 and 50 degrees C. Scanning electron microscopy (SEM) analysis showed that there was no appreciable microwear on the diamond after the static etch tests for all three types of disks. Disks D1 and D3 showed no appreciable corrosion on the diamond disk substrate for both slurries at both temperatures. In comparison, disk D2 showed apparent surface corrosion using the Fujimi PL-7103 slurry at 25 and 50 degrees C and the Cabot Microelectronics Corporation iCue 600Y75 slurry at 50 degrees C. Inductively coupled plasma-mass spectroscopy (ICPMS) analysis was performed before and after the static etch tests to investigate metal concentration increases in the slurry due to diamond disk substrate corrosion. The ICPMS analysis was consistent with the SEM images, showing a significant Ni concentration increase in the slurry for disk D2 with the Fujimi PL-7103 slurry at 25 and 50 degrees C and the Cabot Microelectronics Corporation iCue 600Y75 slurry at 50 degrees C. In addition to the above static etch tests, 24 h wear tests were performed on each type of diamond disks with Fujimi PL-7103 and Cabot Microelectronics Corporation iCue 600Y75 slurries at two different platen temperatures (25 and 50 degrees C). SEM analysis was performed on selected aggressive and inactive diamonds as well as on the surrounding disk substrate before and after the wear tests. SEM images showed that there was microwear on the cutting edges of the aggressive diamonds for disks D1 and D3 with both slurries at 25 and 50 degrees C. For disk D2, there was microwear on the cutting edges of the aggressive diamond with the Fujimi PL-7103 slurry at 25 degrees C and with the Cabot Microelectronics Corporation iCue 600Y75 slurry at 25 and 50 degrees C, and the aggressive diamond broke off from the disk substrate with the Fujimi PL-7103 slurry at 50 degrees C. The SEM images also showed that there was no microwear on the inactive diamond for all three types of disks with both slurries at 25 and 50 degrees C, confirming that the inactive diamonds did not participate in regenerating pad asperities during conditioning. The pad thickness profile was measured after the wear tests, and the effect of platen temperature on pad wear rate was investigated.
引用
收藏
页码:H250 / H255
页数:6
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