Effects of annealing process and the additive on the electrical properties of chemical solution deposition derived 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thin films

0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) (PMN-PT) thin films were deposited on (111)Pt/Ti/SiO2/Si substrates via the chemical solution deposition. Both of the annealing process and additive methanamide play an obvious part in the structure and electrical properties of PMN-PT films. The optimized high-qualitied PMN-PT thin film in present work is fabricated with the methanamide in the precursor and annealed at 650 A degrees C for 20 min. The film exhibits pure perovskite phase and superior ferroelectricity. The saturation polarization P (s) and remanent polarization P (r) are 52.1 A mu C/cm(2) and 18.7 A mu C/cm(2) at 500 kV/cm with 1000 Hz. It also shows low leakage current density of approximately 1.0 x 10(- 8) A/cm(2) at 200 kV/cm.