Structural and electrical properties of nitrogen-doped ZnO thin films

被引：14

作者：

Tuzemen, Ebru Senadim ^{[1
]}

Kara, Kamuran ^{[2
]}

Elagoz, Sezai ^{[3
]}

Takci, Deniz Kadir ^{[4
]}

Altuntas, Ismail ^{[3
]}

Esen, Ramazan ^{[4
]}

机构：

[1] Cumhuriyet Univ, Dept Phys, Nanotechnol Ctr, TR-58140 Sivas, Turkey

[2] Istanbul Univ, Dept Phys, TR-34314 Istanbul, Turkey

[3] Cumhuriyet Univ, Dept Nanotechnol Engn, Nanotechnol Ctr, TR-58140 Sivas, Turkey

[4] Cukurova Univ, Dept Phys, TR-01330 Adana, Turkey

来源：

APPLIED SURFACE SCIENCE | 2014年 / 318卷

关键词：

X-ray diffraction; Optical properties; Raman spectroscopy; CATHODIC VACUUM-ARC; OPTICAL-PROPERTIES; THERMAL-OXIDATION; PHOTOLUMINESCENCE; TEMPERATURE; DEPOSITION; GROWTH;

D O I：

10.1016/j.apsusc.2014.02.118

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and optical properties of thin films was investigated. XRD studies were carried out to analyze and compare the structural quality of undoped and nitrogen-doped ZnO films. Raman measurement was performed to study the doping effects in the ZnO. The optical transmittances of all films are studied as a function of wavelength using UV-VIS-NIR spectrophotometer. The optical band gap values of the films are found using absorbance spectrums. The electrical studies for the films are carried out by using Hall-effect measurements. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：157 / 163

页数：7

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