In situ TEM observations of room temperature dislocation climb at interfaces in nanolayered Al/Nb composites

被引：83
|
作者：
Li, Nan [1 ,2 ]
Wang, J. [1 ]
Huang, J. Y. [3 ]
Misra, A. [1 ]
Zhang, X. [2 ]
机构：
[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[2] Texas A&M Univ, Dept Mech Engn, College Stn, TX 77843 USA
[3] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA
来源：
SCRIPTA MATERIALIA | 2010年 / 63卷 / 04期
关键词：
in situ TEM; Dislocations; Multi layers; Climb; NANOCRYSTALLINE ALUMINUM; ATOMISTIC SIMULATIONS; FORMATION MECHANISM; GRAIN-BOUNDARY; DEFORMATION; SCALE; AL; NANOINDENTATION; DYNAMICS; NUCLEATION;
D O I：
10.1016/j.scriptamat.2010.04.005
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Using in situ nanoindentation, we investigated dislocation interface interactions in Al/Nb multilayers. Preferential storage of dislocations at interfaces, as opposed to within layers, was observed. Recovery of dislocations was observed to occur through climb in the interfaces. The rapid climb of dislocations is ascribed to high vacancy diffusivity and vacancy concentration in the interfaces. The vacancy formation energy at interfaces, 0.12 eV, as estimated from the experimentally measured climb rates, was found to be significantly lower than in the bulk. Published by Elsevier Ltd. on behalf of Acta Materialia Inc.
引用
收藏
页码：363 / 366
页数：4
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