Ferroelectric behavior in thin films of antiferroelectric materials

被引：77

作者：

Ayyub, P ^{[1
]}

Chattopadhyay, S ^{[1
]}

Pinto, R ^{[1
]}

Multani, MS ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.57.R5559

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that when a typically antiferroelectric material such as PbZrO3 or BiNbO4 is deposited as a thin film on a semiconducting substrate (Si), it displays ferroelectric behavior below a critical film thickness characteristic of the system. In an attempt to understand this "size effect," we consider the contributions of residual strain and the self-biasing effect produced by the intrinsic electric field at the semiconductor-insulator interface.

引用

页码：R5559 / R5562

页数：4

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