Degradation Mechanism due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se2 Solar Cells

被引:0
|
作者
Poudel, Deewakar [1 ]
Karki, Shanker [1 ]
Belfore, Benjamin [1 ]
Rajan, Grace [1 ]
Ashrafee, Tasnuva [1 ]
Soltanmohammad, Sina [2 ]
Rockett, Angus [2 ]
Marsillac, Sylvain [3 ]
机构
[1] Old Dominion Univ, Elect & Comp Engn, Norfolk, VA 23529 USA
[2] Colorado Sch Mines, Met & Mat Engn, Golden, CO 80401 USA
[3] Old Dominion Univ, Virginia Inst Photovolta, Norfolk, VA USA
关键词
CIGS; corrosion; top contact; SPECTROSCOPIC ELLIPSOMETRY; STABILITY;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this contribution, we present preliminary results on the change in CIGS solar cells behavior due to water ingress on the top contact. The impact of the top contact fabrication conditions was studied. Depending on these conditions, no change was observed on the ITO layer itself and an overall loss in device performance was observed after such exposure, mostly due to a decrease in fill factor. To identify the potential sources of degradation, thin film analysis and current-voltage (J-V) and quantum efficiency (QE) measurements on completed devices and hall effect measurement on window layer were performed to characterize the electrical properties.
引用
收藏
页码:1153 / 1155
页数:3
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