Enhanced tunnel magnetoresistance and electric-field effect in CoFeB/MgO/CoFeB perpendicular tunnel junctions with W underlayer

被引：15
|
作者：
Kim, Dae-Hoon [1 ]
Park, Kyung-Woong [1 ]
Park, Byong-Guk [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 34141, South Korea
来源：
CURRENT APPLIED PHYSICS | 2017年 / 17卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
Magnetic tunnel junction; Tunnel magnetoresistance; Electric-field effect; Perpendicular magnetic anisotropy; SPIN-ORBIT TORQUE; MAGNETIC-ANISOTROPY; BARRIER;
D O I：
10.1016/j.cap.2017.04.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the dependence of tunnel magnetoresistance (TMR) and its electric-field effect in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) on different underlayer (UL) materials. We observed enhancements in the TMR ratio and its temperature dependence as well as electric-field effect in MTJs with W UL, as compared to those in MTJs with a conventional Ta UL. This is attributed to better thermal stability of perpendicular magnetic anisotropy (PMA) in W/CoFeB/MgO, which sustains up to 380 degrees C, compared to that of Ta/CoFeB/MgO which starts to degrade at 270 degrees C. This demonstrates that the PMA in a CoFeB/MgO structure and its electric-field dependence can be enhanced by the careful selection of underlayer, opening the way for the realization of electric-field effect-driven spintronic devices. (C) 2017 Elsevier B. V. All rights reserved.
引用
收藏
页码：962 / 965
页数：4
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