Study on the contribution of the charge transfer excited states in Ba2MgGe2O7 : Cr4+ crystal to g factor

被引:0
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作者
Wu Xiao-xuan [1 ]
Zheng Wen-chen
机构
[1] Civil Aviat Flying Inst China, Dept Phys, Guanghan 618307, Peoples R China
[2] Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
[3] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
关键词
electron paramagnetic resonance; g factor; charge transfer mechanism; crystal-and ligand-field theory; Ba2MgGe2O7; crystal;
D O I
暂无
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
A complete high-order perturbation formula of g factor for cubic 3d(2) MX4 clusters was established. In the formula, not only the contributions of the crystal-field (CF) mechanism (which is related to the CF excitations) to the g-shift Delta g(=g-g(s)), but also the contributions of the charge-transfer (CT) mechanism (related to CT excitations) were considered. Using the formula, the g factor of Ba2MgGe2O7 : Cr4+ was calculated. The result was in agreement with the observed value. It was found that the calculated Delta g(CT) due to the charge-transfer mechanism is opposite in sign and about 38% in magnitude, compared with the calculated Delta g(CF) due to the crystal-field mechanism So, for a high valence 3d(n) ion in crystals, the reasonable explanation of g factor should take into account the contributions of both crystal-field and charge-transfer mechanisms.
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页码:8 / 11
页数:4
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