Zener interminiband resonant breakdown in superlattices

被引：76
|
作者：
Sibille, A
Palmier, JF
Laruelle, F
机构：
[1] ENSTA, F-75739 Paris 15, France
[2] CNET, DTD, France Telecom, F-92225 Bagneux, France
[3] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France
来源：
PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 20期
关键词：
D O I：
10.1103/PhysRevLett.80.4506
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Semiconductor superlattices are ideal systems to test theories involving band structure properties. We investigate here the "Zener" breakdown in the miniband structure of GaAs/GaAlAs superlattices, which, in contrast to interband tunneling in bulk semiconductors, exhibits resonant tunneling properties. The results of de and microwave transport experiments are explained by a quantum sequential ladder descent model, incorporated in an effective medium description of the transport processes.
引用
收藏
页码：4506 / 4509
页数：4
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